unisonic technologies co., ltd UMBF170 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r502-291.b n-channel enhancement mode ? description the UMBF170 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) <5 ? @v gs =10v * r ds(on) <5.3 ? @v gs =4.5v * low reverse transfer capacitance ( c rss = typical 7.5 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 2.gate 1.source 3.drain sot-23-3 1 2 3 (jedec to-236) ? ordering information pin assignment ordering number package 1 2 3 packing UMBF170g-ae2-r sot-23-3 s g d tape reel ? marking
UMBF170 preliminary power mosfet unisonic technologies co., ltd 2 of 2 www.unisonic.com.tw qw-r502-291.b ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 60 v drain-gate voltage (r g =25k ? ) v dgs 60 v gate-source voltage v gss 20 v continuous drain current (v gs =10v) i d 300 ma peak drain current (t p Q 10s) i dm 1.2 a power dissipation p d 0.83 w junction temperature t j +150 storage temperature t stg -65 ~ +150 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? thermal data parameter symbol ratings unit junction-to-ambient ja 350 k/w ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =10a 60 75 v v ds =48v, v gs =0v 0.01 1.0 a drain-source leakage current i dss v ds =25v, v gs =0v 5 500 na gate-source leakage current i gss v gs = 15v, v ds =0v 10 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =1ma 1 2 v v gs =10v, i d =300ma 2.8 5 static drain-source on-resistance r ds(on) v gs =4.5v, i d =75ma 3.8 5.3 ? forward transconductance g fs v ds =10v, i d =200ma 100 300 ms dynamic parameters input capacitance c iss 25 40 pf output capacitance c oss 18 30 pf reverse transfer capacitance c rss v ds =10 v, v gs =0 v, f=1mhz 7.5 10 pf switching parameters turn-on delay time t d(on) 3 10 ns turn-off delay time t d(off) v dd =50v, v gs =10v, r gs =50 ? r g =50 ? , r d =250 ? 12 15 ns source- drain diode ratings and characteristics diode forward voltage v sd i s =300ma, v gs =0v 0.85 1.5 v maximum body-diode continuous current i s 300 ma peak source (diode forward) current i sm pulsed; t p Q 10s 1.2 a body diode reverse recovery time t rr 30 ns body diode reverse recovery charge q rr i s =300ma, di/dt=-100a/ s, v gs =0v, v ds =25v 30 nc utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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